| PART |
Description |
Maker |
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
| APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| CRNA25-1000 CRNA25-1000PT CRNA25-400PT |
DIODE RECT 1000V 25A ISO TO220AB 15.9 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
15.9 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Crydom, Inc.
CRYDOM CORP
|
| MIP0210SP |
ISOLATOR 3P 25AISOLATOR 3P 25A; Poles, No. of:3; Current rating:25A; Configuration, contact:1 N/O 1 N/C; Depth, external:169mm; IP rating:IP55; Length / Height, external:174mm; Material:Steel; Power, switching AC3 max:5.5kW; Width,
Silicon MOS IC
|
PANASONIC CORP
Panasonic Semiconductor
|
| AOB25S65 AOT25S65 AOTF25S65 AOB25S65L |
650V 25A a MOS TM Power Transistor
650V 25A a MOS Power Transistor
|
Alpha & Omega Semicondu...
Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
|
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
